Approach to euv lithography simulation文档.pdfVIP

9 Approach to EUV Lithography Simulation Atsushi Sekiguchi Litho Tech Japan Corporation Japan 1. Introduction 1.1 Simulation based on measured development rate measurements EUV lithography is a reduced projection lithography technology based on 13.5 nm wavelength EUV (Extreme Ultraviolet). Development of EUV lithography is currently underway for the mass production of semiconductor devices for 90 nm design rule applications for ArF dry exposures and for 65 to 45 nm design rule applications for ArF immersion exposures [1-2]. EUV lithography is among the most promising next-generation lithography tools for the 32 nm technology node [3]. The evolving consensus is that EUV exposure technologies will be applied to mass production from the year 2011 [4]. Table 1 showed the relationship among technology node, exposure numerical aperture (NA), and process coefficient factor (k1) [5]. Achieving the 32 nm node based on an ArF laser source exposure technology will require the development of an optical system with NA increased to 1.55 and k1 improved to 0.26. In contrast, an exposure technology based on an EUV light source will permit the use of an optical system with 0.25 NA for mass production of the 32 nm node with room to spare. The requirement for the k1 factor is an easy-to-meet value of 0.59. These factors underscore the promise and importance of EUV exposure technologies. However, the devel