ESD Protection In Microwave Device：在微波器件的ESD保护.pptVIP

ESD Protection In Microwave Device 2003-21649 ? ? ? Contents Introduction Material considerations Degradation Failure MESFET, MODFET, HEMT, HBT Requirements for ESD protection circuits ESD protection circuits devices Conclusions Introduction ESD (Electrostatic Discharge) ????? ?? ??? ????? ??? ????? ? ??? ?? ??? ??? ?????? ??? ?? ?????? ?? ?? ??? ?????? ??? Reliability aspect ESD in Microwave Device ?? ?? ??? ??? ??? ESD ??? ?? ??? ??? ?? Material considerations (1) Melting point thermal conductivity of compound semiconductors is lower than of silicon. “Heat up faster and melt earlier” Their susceptibility to ESD is higher as compared to silicon. Material considerations (2) The melt thresholds for the compound semiconductor devices are about a decade lower than for Si devices. The burn out of compound semiconductors will occur at lower energies. (related to the defect density) Degradation Failure (1) The lateral material migration across the GaAs surface - inter electrode short circuiting bridge Contact spiking is caused by focused current flow - filament penetrates junction (short) Charge injection and oxide degradation and breakdown (related to the defect density) Degradation Failure (2) Filamentation in the semiconductor material - A current flow in a localized region creates a melt filament (leads to increased leakage current by a resistive path / shorted junction) Degradation effects related to electromigration in two or three element compound S.C. - the evaluation of the surface condition is even more complex MESFET Degradation (1) Lateral material migration Inter-diffusion between gold-based metal and GaAs-substrate (Ohmic contact) Contact spiking Gate blow-off (Schottky-contact) MESFET Degradation (2) MESFET Degradation (3) MESFET Degradation (4) MODFET Degradation (1) The deconfinement of the 2-DEG Formation of a potential barrier These two effects will result in decrease in source-drain current. MODFET Degradation (2) HEMT Degradation Inter