photoelectrochemical conversion from graphitic c3n4 quantum dot decorated semiconductor nanowires.光电化学转换从石墨c3n4量子点半导体纳米线装饰.pdfVIP

Research Article Photoelectrochemical Conversion from Graphitic C N Quantum Dot 3 4 Decorated Semiconductor Nanowires Tiance An,†,⊥ Jing Tang, †,⊥ Yueyu Zhang,‡ Yingzhou Quan,† Xingao Gong,‡ Abdullah M. Al-Enizi, § Ahmed A. Elzatahry, ∥ Lijuan Zhang,*,† and Gengfeng Zheng*,† †Laboratory of Advanced Materials, Department of Chemistry, Collaborative Innovation Center of Chemistry for Energy Materials, Fudan University, Shanghai 200433, China ‡Key Laboratory of Computational Physical Sciences, Ministry of Education, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai 200433, China §Department of Chemistry, College of Science, King Saud University, Riyadh 11451, Saudi Arabia ∥Materials Science and Technology Program, College of Arts and Sciences, Qatar University, Doha, Qatar S *Supporting Information ABSTRACT: Despite the recent progress of developing graphitic carbon nitride (g- C N ) as a metal-free photocatalyst, the synthesis of nanostructured g-C N has still 3 4 3 4 remained a complicated and time-consuming approach from its bulk powder, which substantially limits its photoelectrochemical (PEC) applications as well as the potential to form composites with other semiconductors. Different from the labor- intensive methods used before, such as exfoliation or assistant templates,