半导体工艺及器件模拟二教程.ppt

MOS管的二次击穿 * MOS管的二次击穿 * MOS管的二次击穿 * * Thermodynamic Transport 模型模拟自加热效应 当考虑到温度变化而利用热动力学模型时，需将扩散漂移方程组中的电 流密度改写为： Pn、 Pp 分别是电子、空穴的热电功率. 晶格温度方程为： C 是晶格而导率，k是晶格比热，而 R是复合率 * Thermodynamic Transport 模型模拟自加热效应 * 热动力学模型 File { *Input file Grid = “nmos2_mdr.grd” Doping= “nmos2_mdr.dat” *output file Plot = “ nmos20_des.dat” Current = “ nmos20_des.plt” Output = “ nmos20_des.log” } * Thermodynamic Transport 模型模拟自加热效应 Electrode { *Having loaded the device structure into DESSIS, it is necessary * to specify which of the contacts are to be treated as electrodes. * Electrodes in DESSIS are defined by electrical boundary * conditions and contain no mesh. { Name="source” Voltage=0.0 } { Name="drain“ Voltage=0 } { Name="gate“ Voltage=0 Barrier=-0.55 } { Name="substrate" Voltage=0.0 } } * Thermodynamic Transport 模型模拟自加热效应 Thermode { { Name=“ substrate” Temperature=300 SurfaceResistance=2e-2 } *Unit: cm2K/W } *某个接触的热阻，当一个物体的热功率变化1W，通过一定的面积的热传导而产生 物体温度的差值。 Physics { Thermodynamic Mobility (DopingDep HighFieldSat Enormal) EffectiveIntrinsicDensity (BandGapNarrowing (OldSlotboom)) } *HighFieldSat可分成eHighFieldSat(GraQuasiFermi)以及 hHighFieldSat(GraQuasiFermi) * Thermodynamic Transport 模型模拟自加热效应 Plot { *Fields, Charges, etc Potential ElectricField SpaceCharge eMobility hMobility eVelocity hVelocity *Doping profiles DonorConcentration AcceptorConcentration DopingConcentration * Thermodynamic Transport 模型模拟自加热效应 *Band Structure/Composition ConductionBand ValenceBand BandGap BandGapNarrowing Affinity