Semiconductor Device and Material Characterization文档.pdfVIP

ECE 4813 Semiconductor Device and Material Characterization Dr. Alan Doolittle School of Electrical and Computer Engineering Georgia Institute of Technology As with all of these lecture slides, I am indebted to Dr. Dieter Schroder from Arizona State University for his generous contributions and freely given resources. Most of (80%) the figures/slides in this lecture came from Dieter. Some of these figures are copyrighted and can be found within the class text, Semiconductor Device and Materials Characterization. Every serious microelectronics student should have a copy of this book! ECE 4813 Dr. Alan Doolittle Defects Types of Defects Defect Etching Generation 鈥 Recombination Capacitance Transients Deep Level Transient Spectroscopy ECE 4813 Dr. Alan Doolittle Defects and Yield Metal Interstitial Vacancies Impurities Oxygen Self Interstitials Recombination Metal Dislocations Centers Precipitates Stacking Faults Precipitates DRAM Refresh Leaky Oxide Bipolar Trans. Failures Junctions Breakdown Pipes Yield $ ECE 4813 Dr. Alan Doolittle Wafer Defects Bulk Si Particles, Epitaxial Si Scratches Roughness Metals Defects Epi Layer