单晶lab6场发射二极管阵列分析-光学工程专业论文.pdf.docxVIP

ABSTRACTmicromachining technologies of semiconductor technologies, mainly including photo- lithography and etching, and in this paper the patterning of mask layer was done by projection exposure method and reactive ion etching (RIE). Electrochemical corrosion was the key component in this paper. A large number of experiments were made to find out the optimal technology parameters, including the type and deepness of electrolyte, the current of electrolyze, the time of electrolyze, etc. And then, the field emitter arrays with good surface appearance, height and roughness were obtained.Finally, the performance of fabricated LaB6-FEA was tested, and experimental phenomenon and data were discussed and analyzed in detail. The results showed that this field emitter array had good field emission performance and stability.Keywords: field emitter array (FEA), lanthanum hexaboride (LaB6), semiconductor manufacturing technology, electrochemical corrosion目录目录第一章 前言........................................................ 11.1 课题研究背景 ................................................... 11.2 课题研究意义 ................................................... 21.3 本论文的主要工作 ............................................... 4第二章 场发射阵列（FEA）52.1 场发射发展史 ................................................... 52.2 场致发射理论 ................................................... 62.2.1 场致电子发射 .............................................. 62.2.2 场致发射方程 .............................................. 72.3 场发射阵列的分类与制备 ......................................... 82.3.1 钼锥场发射阵列及其制备 .................................... 82.3.2 硅锥场发射阵列及其制备 ................................... 102.3.3 金刚石薄膜场发射阵列及其制备 ............................. 112.3.4 碳纳米管场发射阵列及其制备 ............................... 122.4 场发射阵列的应用 .............................................. 132.4.1 场发射显示器件（FED）132.4.2 FEA 应用于微波器件172.4.3 FEA 应用于其它方面18第三章 场发射阵列制备的前期设计................................... 203.1 场发射阵列的材料选择 .......................................... 203.1.1 FEA