单源化学气相沉积法异质外延生长zno薄膜-材料科学与工程专业论文.pdf.docx

abstractABSTRACTZnO is a semiconductor material of wurtzite structure with a direct wide-band of 3.37eV and a high exciton binding energy of 60meV at room temperature. It can be used in solar batteries, sound surface wave devices, gas sensors and optoelectronic device due to its outstanding optical and electronic properties. Realizing high quality and the specific orientation ZnO thin films in heteroepitaxial grown is the hot issue in studies, in particular, the controllable growth of ZnO thin films with nonpolar orientation will be studied intensively. The rencent research shows that, nonpolar ZnO has some new characterizations, for example, it can restrain or weaken polarization-induced built-in electric fields caused by spontaneous and piezoelectric polarization in polar ZnO, which can improve Luminous Efficience of ZnO thin films, thought nonpolar ZnO arouses the scientists’ attention. ZnO thin films of high crystal quality can be fabricated in heteroepitaxial by changing substrates or adjusting technology parameters. The ZnO thin films of high crystal quality in heteroepitaxial have been prepared by single source chemical vapor deposition (SSCVD) method, the major results as following:ZnO thin films with c-axis preferential orientations were deposited on Au/SiO2 substrate using SSCVD method. Effects of substrate temperature on the microstructure of ZnO films have been studied by X-ray diffraction (XRD) and scanning electron microscope (SEM). Finally, the optical properties of ZnO films on Au/SiO2 substrate were determined by PL spectra.A-plane orientation ZnO thin films with high crystal quality were grown on?Al2O3 (0112)substrate by changing substrates and adjusting technology parameters(source temperature，substrate temperature and deposition time). The stress type and size in the a-plane orientation ZnO thin films was calculated through analyzing peak?position of (112 0)ZnO thin films.diffraction peak, it existed tensile stress in the a-plane orientationI