官方说明书ROHM 2SA2071 说明书.pdf

Power transistor (60V, 3A) 2SA2071 Features Dimensions (Unit : mm) 1) High speed switching. (Tf : Typ. : 20ns at IC = 3A) 2) Low saturation voltage, typically MPT3 (Typ. : 200mV at IC = 2A, IB = 0.2A) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5824 (1)Base(Gate) Each lead has same dimensions Applications (2)Collector(Drain) (3)Emitter(Sourse) Abbreviated symbol : UN Low Frequency Amplifier High speed switching Structure PNP Silicon epitaxial planar transistor Packaging specifications Package Taping Type Code T100 Basic ordering unit (pieces) 1000 2SA2071 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −60 V Emitter-base voltage VEBO −6 V IC −3 A Collector current ICP −6 A ∗1 500 mW Power dissipation PC ∗2 2.0 W Junction temperature Tj 150 °C Range of storage temperature Tstg −55 to + 150 °C ∗1 Pw= 100ms ∗2 Mounted o