官方说明书AMD AM28F010 memory.pdf

FINAL Am28F010 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS High performance Flasherase™ Electrical Bulk Chip-Erase — 70 ns maximum access time — One second typical chip-erase CMOS Low power consumption Flashrite™ Programming — 30 mA maximum active current — 10 µs typical byte-program — 100 µA maximum standby current — Two seconds typical chip program — No data retention power consumption Command register architecture for Compatible with JEDEC-standard byte-wide microprocessor/microcontroller compatible 32-Pin EPROM pinouts write interface — 32-pin PDIP On-chip address and data latches — 32-pin PLCC Advanced CMOS flash memory technology — 32-pin TSOP — Low cost single transistor memory cell 10,000 write/erase cycles minimum Automatic write/erase pulse stop timer Write and erase voltage 12.0 V ±5% Latch-up protected to 100 mA from –1 V to VCC +1 V GENERAL DESCRIPTION The Am28F010 is a 1 Megabit Flash memory orga- AMD’s Flash technology reliably stores memory con- nized as 128 Kbytes of 8 bits each. AMD’s Flash mem- tents even after 10,000 erase and program cycles. The ories offer the most cost-effective and reliable read/ AMD cell is designed to optimize the erase and pro- write non-volatile random access memory. The gramming mechanisms. In addition, the combination of Am28F010 is packaged in 32-pin PDIP,