官方说明书ST STRH100N6 数据手册.pdf

ST STRH100N6 handbook /file/2716522 From ManualL ManualL collects and classifies the global product instrunction manuals to help users access anytime and anywhere, helping users make better use of products. Home: / Chinese: / This Manual: /file/2716522 STRH100N6 Rad-Hard N-channel, 60 V, 80 A Power MOSFET Features VDSS ID RDS(on) Qg 60 V 80 A 12 mΩ 134.4 nC ■ Fast switching ■ 100% avalanche tested 3 ■ Hermetic package 2 1 ■ 70 krad TID TO-254AA ■ SEE radiation hardened Applications Figure 1. Internal schematic diagram ■ Satellite ■ High reliability Description This N-channel Power MOSFET is developed with STMicroelectronics unique STripFET™ process. It has specifically been designed to sustain high TID and provide immunity to heavy ion effects. Table 1. Device summary ESCC part Lead Part numbers Quality level Package Mass (g) Temp. range