官方说明书ST L6398 数据手册.pdf

ST L6398 handbook /file/2714410 From ManualL ManualL collects and classifies the global product instrunction manuals to help users access anytime and anywhere, helping users make better use of products. Home: / Chinese: / This Manual: /file/2714410 L6398 High voltage high and low side driver Features ■ High voltage rail up to 600 V ■ dV/dt immunity ±50 V/ns in full temperature range ■ Driver current capability: – 290 mA source, – 430 mA sink ■ Switching times 75/35 ns rise/fall with 1 nF load ■ 3.3 V, 5 V TTL/CMOS input comparators with hysteresis Description ■ Integrated bootstrap diode The L6398 is a high-voltage device manufactured ■ Fixed 320 ns dead-time with the BCD “OFF-LINE” technology. It is a single ■ Interlocking function chip half-bridge gate driver for N-channel power MOSFET or IGBT. ■ Compact and simplified layout ■ Bill of material reduction The high side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs ■ Flexible, easy and fast design are CMOS/TTL compatible down to 3.3 V for easy