官方说明书ST L6393 数据手册.pdf

ST L6393 handbook /file/2714424 From ManualL ManualL collects and classifies the global product instrunction manuals to help users access anytime and anywhere, helping users make better use of products. Home: / Chinese: / This Manual: /file/2714424 L6393 Half-bridge gate driver Features ■ High voltage rail up to 600 V ■ dV/dt immunity ± 50 V/nsec in full temperature range ■ Driver current capability: – 290 mA source, – 430 mA sink ■ Switching times 75/35 nsec rise/fall with 1 nF load Description ■ 3.3 V, 5 V CMOS/TTL inputs comparators with hysteresis The L6393 is a high-voltage device manufactured ■ Integrated bootstrap diode with the BCD “OFF-LINE” technology. It is a single chip half-bridge gate driver for N-channel power ■ Uncommitted comparator MOSFET or IGBT. ■ Adjustable dead-time The high side (floating) section is designed to ■ Compact and simplified layout stand a voltage rail up to 600 V. ■ Bill of material reduction