官方说明书ST STP6NC80Z 数据手册.pdf

STP6NC80Z - STP6NC80ZFP STB6NC80Z - STB6NC80Z-1 N-CHANNEL 800V - 1.5Ω - 5.4A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III MOSFET TYPE VDSS RDS(on) ID STP6NC80Z/FP 800V 1.8 Ω 5.4 A STB6NC80Z/-1 800V 1.8 Ω 5.4 A 3 1 TYPICAL RDS(on) = 1.5 Ω 3 D²PAK 2 EXTREMELY HIGH dv/dt AND CAPABILITY 1 GATE-TO- SOURCE ZENER DIODES TO-220 TO-220FP 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED 3 2 1 I²PAK DESCRIPTION (Tabless TO-220) The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to- back Zener diodes between gate and source. Such ar- rangement gives extra ESD capability with higher rug- gedness performance as requested by a large variety of single-switch applications. APPLICATIONS SINGLE-ENDED SMPS IN MONITORS, COMP