官方说明书ST VNS3NV04D-E 数据手册.pdfVIP

ST VNS3NV04D-E handbook /file/2713429 From ManualL ManualL collects and classifies the global product instrunction manuals to help users access anytime and anywhere, helping users make better use of products. Home: / Chinese: / This Manual: /file/2713429 VNS3NV04D-E OMNIFET II fully autoprotected Power MOSFET Features Max On-State resistance (per ch.) RON 120mΩ Current limitation (typ) ILIMH 3.5A Drain-Source clamp voltage VCLAMP 40V SO-8 ■ Linear current limitation ■ Thermal shut down ■ Short circuit protection Description ■ Integrated clamp The VNS3NV04D-E is a device formed by two ■ Low current drawn from input pin monolithic OMNIFET II chips housed in a ■ Diagnostic feedback through input pin standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 ■ Esd protection Technology: they are intended for replacement of ■ Direct access to the gate of the power mosfet standard Power MOSFETs from DC up to 50KHz (analog driving) applications