官方说明书FAIRCHILD HUF75345G3, HUF75345P3, HUF75345S3S 说明书.pdf

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2018-05-11 发布于浙江
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官方说明书FAIRCHILD HUF75345G3, HUF75345P3, HUF75345S3S 说明书.pdf

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官方说明书FAIRCHILD HUF75345G3, HUF75345P3, HUF75345S3S 说明书

FAIRCHILD HUF75345G3 HUF75345P3 HUF75345S3S Manual /file/2687412 From ManualL ManualL collects and classifies the global product instrunction manuals to help users access anytime and anywhere, helping users make better use of products. Home: / Chinese: / This Manual: /file/2687412 HUF75345G3, HUF75345P3, HUF75345S3S Data Sheet December 2009 75A, 55V, 0.007 Ohm, N-Channel UltraFET Features Power MOSFETs • 75A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models achieves the lowest possible on-resistance per silicon area, Available on the WEB at: resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the • Peak Current vs Pulse Width Curve diode exhibits very low reverse recovery time and stored • UIS Rating Curve charge. It was designed for use in applications where power • Related Literature efficiency is important, suc