官方说明书FAIRCHILD NDS8852H 数据手册.pdf

FAIRCHILD NDS8852H handbook /file/2635677 From ManualL ManualL collects and classifies the global product instrunction manuals to help users access anytime and anywhere, helping users make better use of products. Home: / Chinese: / This Manual: /file/2635677 查询NDS8852H供应商 February 1996 NDS8852H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are N-Channel 4.3A, 30V, RDS(ON)=0.08 @ VGS=10V. produced using Fairchilds proprietary, high cell density, P-Channel -3.4A, -30V, R =0.13 @ V =-10V. DMOS technology. This very high density process is DS(ON) GS especially tailored to minimize on-state resistance, provide High density cell design or extremely low RDS(ON). superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These High power and current handling capability in a widely used devices are particularly suited for low voltage half bridge surface mount package. applications or CMOS applications when both gates are Matched pair for equal input capacitance and power capability connected together.