官方说明书ST VNQ810M-E 数据手册.pdfVIP

ST VNQ810M-E handbook /file/2713331 From ManualL ManualL collects and classifies the global product instrunction manuals to help users access anytime and anywhere, helping users make better use of products. Home: / Chinese: / This Manual: /file/2713331 VNQ810M-E QUAD CHANNEL HIGH SIDE DRIVER Table 1. General Features Figure 1. Package Type RDS(on) Iout VCC VNQ810M-E 150mΩ (*) 0.6A (*) 36V (*) Per each channel CMOS COMPATIBLE INPUTS OPEN DRAIN STATUS OUTPUTS ON STATE OPEN LOAD DETECTION OFF STATE OPEN LOAD DETECTION SHORTED LOAD PROTECTION UNDERVOLTAGE AND OVERVOLTAGE SHUTDOWN PROTECTION AGAINST LOSS OF GROUND SO-28 (DOUBLE ISLAND) VERY LOW STAND-BY CURRENT REVERSE BATTERY PROTECTION (**) IN COMPLIANCE WITH THE 2002/95/EC EUROPEAN DIRECTIVE DESCRIPTION The VNQ810M-E is a quad HSD formed by Active current limitation combined with thermal assembling two VND810M-E chips in the same shutdown and automatic restart protects the SO-28 package. The VNQ810M-E is a monolithic device against overload. The current limitation device made by using STMicroelectronics threshold is aimed at detecting the 21W/12V VIPower M0-3 Technology, i