基于硅基反铁电厚膜场致应变效应的微驱动构件结构设计与制造-精密仪器及机械专业论文.docx

中北大学学位论文Design and Fabrication of Field-induced Strain Effects for the Silicon based Antiferroelectric Microactuators AbstractThe antiferroelectric materials has rapid switching characteristics and a large field induced strain effects, and the integration of functional antiferroelectric materials and MEMS technology, provide a new way of thinking for the design and manufacture of rapid response and large displacement micro-actuators.In this paper, (Pb, La) (Zr, Ti)O3 (PLZT) antiferroelectric thick films with thickness of 3um were deposited on Pt (111)/ Ti/SiO2/Si (100) substrates via sol-gel process. A silicon –based PLZT antiferroelectric thick film microcantilever model was established. Conversion between strain and stress had been done according to the theory of material mechanics and elasticity. The static analysis, modal analysis, harmonic analysis and optimization design of antiferroelectric microcantilever were done by using the finite element software of Ansys11.0.The Bulk and Surface silicon of micromachining process were employed in the silicon-based antiferroelectric thick film microcantilever fabrication, such as wet chemical etching for PLZT, inductive couple plasmas (ICP)for silicon etching, platinum etching and sputtering process. The layout design process, the design of the entire process were introduced to fabricate tens of micron displacement microcantilever actuators.Based on white-light and laser doppler technologies, the MSA-400 of Polytec company was used to test the antiferroelectric-ferroelectric phase transformation strain characteristics of antiferroelectric thick film micro-cantilever under static and dynamic electric field excitation signal. The rule of the frequency and vibration state, bending behavior was analyzed. Which provide a theoretical basis and guidance for the applications of antiferroelectric thick film microcantilever in the field of new type of microactuators.Keywords: (Pb, La) (Zr, Ti) O3 antiferroelectric thick, cantil