半导体Wet Clean的工艺介绍.pptVIP

Wet Clean Technologies Agenda Introduction Concept of wet cleaning Chemicals and Process Conclusion Wafer Cleaning Definition According to a series of processes to make the wafer free from particles, organic contaminations, metal contamination, surface microroughness and native oxide, using some kind of chemical including DIW. Wafer Cleaning Objective The objective of wafer cleaning is the removal of particulate and chemical impurities from the semiconductor surface without damaging or deleteriously altering the substrate surface. Wafer Cleaning History(4 periods) Period from 1950 to 1960 Harmful effects of impurities on the performance were recognized in the early period. Early cleaning techniques consisted of mechanical and chemical. H2O2 had been used in aqueous solutions. Period from 1961 to 1971 Research into semiconductor surface contamination and the systematic development of wafer cleaning procedure. Most important one is the RCA cleaning process was developed by Kern and Puotinen in 1960 at RCA and was published in 1970. Period from 1972 to 1989 Make many developments on H2O2-based cleans. Period from 1990 up to now Explosive growth in the field of wafer cleaning. Great development in Vapor-Phase Cleaning. New observations on the performance and effect of H2O2-based cleaning solutions. Research into the relationship of ratio and the etch rate, the consideration of microroughness. Wafer Cleaning Type Wet Cleaning RCA Clean, CR Clean, Oxide Etch, Nitride Strip, PR Strip, PMD, Solvent Clean, CoSi Strip. Dry Cleaning - HF/H2O vapor clean - Ultraviolet-ozone clean (UVOC) - Ar/H2 plasma cleaning - Thermal cleaning Future Trend The present state of wafer cleaning technologies still does not meet all the future requirements for more advanced ULSI devices. More in-depth understanding of the surface-state physics and chemistry is required, not only to eliminate the surface contaminations but also to provide the atomically flat surface and interface requ