毕业设计论文-多晶硅晶体生长过程中的应力消除.docVIP

多晶硅晶体生长过程中的应力消除 摘要 目前，在铸造多晶硅的生产中，由于在长晶阶段硅锭的不同位置温度不同，即存在温度梯度，因而会产生热应力。如果由于温度梯度而造成的热应力过大且得不到有效地消除，那么在后续的硅片加工和电池制备过程中会造成硅片的隐裂，严重影响多晶硅太阳能电池的生产质量。所谓的隐裂就是在硅棒或硅片生产中不易被人察觉的碎裂。因此，探究与改进多晶硅铸锭过程中消除应力的方法对多晶硅电池片的质量以及寿命有着极其重要的意义。 本实验采用单一变量法对消除多晶硅锭应力的方法进行了研究。研究过程中对48块硅锭进行了统计分析。研究发现，无论是在长晶阶段减小固液界面的温度梯度，还是增加退火时间，又或是适当提高退火温度，都可以降低隐裂硅棒所占的比例。但是在这三种方法中，以增加退火阶段的退火时间这一方法效果最为明显。通过对多晶硅晶体生长过程中应力消除方法的改进，每年可为企业挽回170余万元的损失。因此，其研究结果具有一定的实际意义。 关键词：铸造多晶硅，温度梯度，热应力 Stress Relieving in Crystal Growth of Polycrystalline Silicon ABSTRACT At present,in the production of polycrystalline silicon,thermal stress will be exist because diffierent location has diffierent temperature in crystal growth. In other words,temperature gradient exist in silicon ingot. If thermal stress caused by temperature gradient is not eliminated effectively, the silicon wafer processed will break to pieces. It will affect solar cell quality badly. The subfissure what is called is fragmentation that is not easy to perceive in the silicon wafer processing.Therefore, exploring and improving the method that relieve stress has important significance for quality and life of polycrystalline silicon solar cell. This experiment used Simple Variable Method to explore stress relieving.We make statistic analysis for 48 silicon ingots in the research processing. The results show that decreasing the temperature gradient of solid liquid interface in crystal growth, increasing anneal time or increasing anneal temperature both can reduce the percentage of subfissure silicon brick. But in the three methods, increasing anneal time is the best. By improving the method of stress relieving,we can help the enterprice to redeem the loss of 1.7 million RBM every year.For this reason,the research result has valuable significance. KEY WORDS：Ploycrystalline Silicon, Temperature Gradient, Thermal Stress. 第一章 绪 论 1 §1.1引言 1 §1.2 国内外多晶硅材料的发展现状 1 §1.3铸造多晶硅概述 2 §1.4 铸造多晶硅的生产工艺 3 §1.5铸造多晶硅的晶体生长 9 §1.5.1 铸造多晶硅的原材料 9 §1.5.2坩埚 9 §1.5.3 晶体生长工艺 10 §1.5.4 晶体生长的影响因素及