MOSFET器件 回顾与展望 （MOSFET History Perspective）.pptVIP

Deyuan Xiao Deyuan Xiao Deyuan Xiao 内容 微电子产业的成长 微电子技术取得的进步 P沟道铝栅MOSFET N沟道铝栅MOSFET N沟道自对准多晶硅栅MOSFET 自对准多晶硅栅MOSFET 全自对准金属硅化物MOSFET 全自对准金属硅化物MOSFET 全自对准金属硅化钴及Halo离子注入MOSFET 自对准金属硅化镍超级陡峭退后(SSR)体掺杂MOSFET 接触工艺及其方块电阻随年代的进展 三种硅化物的典型工艺条件 典型CMOS工艺流程模块 Start Wafer Initial Oxidation Shallow Trench Isolation Well Implantation Gate Formation Source/Drain Extension Spacer Formation 典型CMOS器件离子注入分布图 典型CMOS工艺流程模块-Trench Isolation Isolation Is Used To Electrically Isolate PMOS And NMOS Transistors Larger Geometry Processes Use Local Oxidation Of Silicon (LOCOS) Isolation Smaller Geometry Processes Use Shallow Trench Isolation (STI) 典型CMOS工艺流程模块- Trench Isolation 典型CMOS工艺流程模块- Well Formation “Well” is a doped region where MOSFET is formed Electrically isolated NMOS and PMOS transistors in separate wells fabricated on the same substrate in CMOS process Lithography steps define regions where wells are formed 典型CMOS工艺流程模块- Well Formation Ion Implantation Boundary 热退火(Annealing) Thermal process to rearrange atoms in silicon matrix and to remove defects in the material Often used after implantation to place dopant atoms to locations where they can become “activated” In more advanced processes, performed at very rapid heating rates and short times to minimize diffusion transport – “Rapid Thermal Processing” (RTP) or “Rapid Thermal Annealing” (RTA) 热退火(Annealing) Atomistic view of doping with ion implantation, followed by annealing 典型CMOS工艺流程模块- Gate Formation Typically made out of heavily doped polysilicon 典型CMOS工艺流程模块- Gate Formation 典型CMOS工艺流程模块- Source/Drain Formation Source/drain formation consists of: Source/Drain extension (LDD) implant HALO/Pocket implant : to prevent expansion of drain depletion region into lightly doped channel region – “punch-through suppression” Source/Drain implant: high dose implant to reduce the S/D resistance 典型CMOS工艺流程模块- Source/Drain 典型CMOS工艺流程模块- Source/Drain 典型CMOS工艺流程模块- Source/Drain Spacer Formation 短沟道效应(Short Channel Effect) 下一代光刻技术路标 硅衬底上的平面