MRF7S18125AHR3;MRF7S18125AHR5;MRF7S18125AHSR3;MRF7S18125AHSR5;中文规格书Datasheet资料.pdfVIP

Freescale Semiconductor Document Number: MRF7S18125AH Technical Data Rev. 0, 11/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7S18125AHR3 Designed for GSM and GSM EDGE base station applications with MRF7S18125AHSR3 frequencies from 1800 to 2000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations. GSM Application • Typical GSM Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout = 125 Watts CW, f = 1880 MHz. 1805-1880 MHz, 125 W CW, 28 V Power Gain ó 17 dB GSM, GSM EDGE Drain Efficiency ó 55% LATERAL N-CHANNEL GSM EDGE Application RF POWER MOSFETs • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout = 57 Watts Avg., Full Frequency Band (1805-1880 MHz). Power Gain ó 17 dB Drain Efficiency ó 38% Spectral Regrowth @ 400 kHz Offset = -63 dBc Spectral Regrowth @ 600 kHz Offset = -75 dBc EVM ó 1.75% rms • Capable of Handling 5:1 VSWR, @ 28 Vdc, 1840 MHz, 125 Watts CW CASE 465-06, STYLE 1 Output Power NI-780 • Typical Pout @ 1 dB Compression Point 14