在高边工作的MOSFET,其可能的失效模式与失效现象.docxVIP

Power MOSFET in High-Side Operating Modes, Possible Failure Modes, and Failure Signatures+ E+ X??n4 n k+ y, z. `! Z3 z: M nPower MOSFETs in high-side application can fail under any one of the following modes of operation:(a) High-impedance gate drive(b) Electro-static discharge (ESD) exposure2 B3 b- b5 D, G+ p+ D- f(c) Electrical over-stressed (EOS) operation9 k/ } ~4 l! f7 }! jIn most cases, failure analysis of the damaged MOSFET reveals a signature that can point towards a possible cause of failure.(a) High-Impedance Gate Drive4 f9 C/ ^; b6 _A generic schematic configuration for