脉冲二极溅射铜薄膜沉积技术分析-analysis of copper thin film deposition technology by pulsed diode sputtering.docx

哈尔滨 哈尔滨工业大学工学硕士学位论文 - - II - Abstract A pulsed diode sputtering technology for film deposition was proposed and researched in this thesis when considered the development and achievement in high power pulsed magnetron sputtering technology in recent years, to avoid the defect of low target utilization and low structural flexibility in magnetron sputtering. The development process of pulsed glow discharge, as well as the influence to it by parameters of pulsed power, Argon pressure, and target-substrate distance, was studied by measuring and analyzing the target current curve. Plasma density in different time in the process of pulsed discharge was acquired by using the Langmuir probe creatively, and the development of plasma density in different pressure and different position was studied too. The mechanism of the influences of the parameters to the deposition rate and surface quality of copper films was investigated by analyzing cross-section and surface morphologies observed by SEM and surface hardness and adhesion obtained by a nano indenter XP system. Research in the target current curve showed that the pulsed glow discharge is constituted by a starting phase, which is shortened by the increase of target voltage and Argon pressure, and a later stabilizing phase, and when the target voltage and Argon pressure were both in high level, self-sputtering was kindled and there would be a slight current decrease before stabilizing phase. Target current is significantly influenced by target voltage and Argon pressure, and the target-substrate distance and geometry structure have little to do with the current. In the starting phase, Plasma density has an apparent hysteresis when compared with the target current, and when glow discharge ceased in one pulse, the plasma density will maintain for a while, and for longer when pressure increased, instead of decreasing immediately. No apparent hysteresis was observed when compared the plasma density curves obtained in different po