InP 超高频元器件8.pptVIP

Introduction of InP Technology Warren Shih Backside Engineering Dept. Why Use InP Material for RFIC High frequency High speed Low noise Low power consumption Large Diameter InP Wafer Requirement Critical flatness -- warpage Surface quality specification -- uniformity Important Properties of InP High peak electron velocity High thermal conductivity High electric field breakdown InP Devices - HEMTs HEMTs lower noise higher gain@ higher frequencies than GaAs counterpart *ft fmax ?100 GHz higher *noise ? 1dB lower@ 94 GHz *gain ? 50% higher *operating voltage ? half *power consump