- 1、本文档共22页,可阅读全部内容。
- 2、原创力文档(book118)网站文档一经付费(服务费),不意味着购买了该文档的版权,仅供个人/单位学习、研究之用,不得用于商业用途,未经授权,严禁复制、发行、汇编、翻译或者网络传播等,侵权必究。
- 3、本站所有内容均由合作方或网友上传,本站不对文档的完整性、权威性及其观点立场正确性做任何保证或承诺!文档内容仅供研究参考,付费前请自行鉴别。如您付费,意味着您自己接受本站规则且自行承担风险,本站不退款、不进行额外附加服务;查看《如何避免下载的几个坑》。如果您已付费下载过本站文档,您可以点击 这里二次下载。
- 4、如文档侵犯商业秘密、侵犯著作权、侵犯人身权等,请点击“版权申诉”(推荐),也可以打举报电话:400-050-0827(电话支持时间:9:00-18:30)。
- 5、该文档为VIP文档,如果想要下载,成为VIP会员后,下载免费。
- 6、成为VIP后,下载本文档将扣除1次下载权益。下载后,不支持退款、换文档。如有疑问请联系我们。
- 7、成为VIP后,您将拥有八大权益,权益包括:VIP文档下载权益、阅读免打扰、文档格式转换、高级专利检索、专属身份标志、高级客服、多端互通、版权登记。
- 8、VIP文档为合作方或网友上传,每下载1次, 网站将根据用户上传文档的质量评分、类型等,对文档贡献者给予高额补贴、流量扶持。如果你也想贡献VIP文档。上传文档
查看更多
半导体制造原理.doc
The process flow for semiconductor manufacturing is best considered in two sections, the front-end and the back-end
The front-end is wafer processing which is performed in a Wafer Fab area. The process of wafer fabrication is a series of 16-24 loops, each putting down a layer on the device. Each loop comprises some or all of the major steps of photolithography, etch, strip, diffusion, ion implantation, deposition, and chemical mechanical planarization. At each stage, there are various inspections and measurements performed to monitor the process and equipment. Supporting the entire process is a complex infrastructure of materials supply, waste treatment, support, logistics,and automation. It has the cleanest environment in the world - many times cleaner than the best hospital operating theater. A Fab is one of the most complex industrial facilities to be found anywhere. A state-of-the-art Fab, costing over $1 billion, has a denser capital per square foot than any industry.
The back-end is Test, Assembly and Packaging, where the finished wafer is split up into individual die (chips) which are then assembled into packages which can be handled in the final applications. Full functional electrical test is performed at both wafer and package level to ensure outgoing quality.
The wafer growing process is similar to crystal growing experiments that most of us did at school. A seed crystal of silicon is immersed in a bath of molten silicon. It is slowly pulled out, and because crystal growth occurs uniformly in all directions, the cross section is circular and, as it is pulled, it forms a cylindrical ingot of pure silicon. The ingot pulling process lasts for almost 24 hours and produces a cylinder of diameter larger than is desired. The ingot is ground down to the required diameter, and then is sliced into individual wafers.
At this stage, the wafers have a rough texture and need to be finely polished to meet the surface flatness and thickness specifications. To give yo
您可能关注的文档
- 《难溶电解质的溶解平衡》 非原创.ppt
- 【化学】3.4《难溶电解质的溶解平衡》课件1(人教版选修4).ppt
- 【地理】高考地理: 地理答题思路归纳整理.doc
- 【真题精选】口腔执业医师资格考试考题精选(五).docx
- 七年级地理上册第四章第三节《影响气候的因素》第2课时庄刘花.ppt
- 万山海岛电力所全岛停电事故专项应急预案演练方案.doc
- 三班第三组---雅鲁藏布大峡谷.ppt
- 三视图投影规律的.ppt
- 上海交大2013自主招生面试部分试题及答案.doc
- 上课时用(人教新课标)雅鲁藏布大峡谷四年级语文课件_.ppt
- 中国国家标准 GB/T 20867.1-2024机器人 安全要求应用规范 第1部分:工业机器人.pdf
- 《GB/T 20867.1-2024机器人 安全要求应用规范 第1部分:工业机器人》.pdf
- 《GB/T 23423-2024飞机主舱集装货物装载机》.pdf
- GB/T 23423-2024飞机主舱集装货物装载机.pdf
- 中国国家标准 GB/T 23423-2024飞机主舱集装货物装载机.pdf
- 《GB/T 4706.114-2024家用和类似用途电器的安全 第114部分:饮用水处理装置的特殊要求》.pdf
- 中国国家标准 GB/T 4706.114-2024家用和类似用途电器的安全 第114部分:饮用水处理装置的特殊要求.pdf
- GB/T 4706.114-2024家用和类似用途电器的安全 第114部分:饮用水处理装置的特殊要求.pdf
- GB/T 4706.120-2024家用和类似用途电器的安全 第120部分:紫外线辐射水处理器具的特殊要求.pdf
- 中国国家标准 GB/T 4706.120-2024家用和类似用途电器的安全 第120部分:紫外线辐射水处理器具的特殊要求.pdf
文档评论(0)