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- 2018-09-03 发布于福建
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Numerical Simulation of InGaN Schottky Solar Cell
Sidi Ould Saad Hamadya,b,, Abdoulwahab Adainea,b , Nicolas Fressengeasa,b
a Universit´e de Lorraine, Laboratoire Mat´eriaux Optiques, Photonique et Syst`emes, EA 4423, Metz, F-57070, France
b CentraleSup´elec, Laboratoire Mat´eriaux Optiques, Photonique et Syst`emes, EA 4423, Metz, F-57070, France
Abstract
The Indium Gallium Nitride (InGaN) III-Nitride ternary alloy has the potentiality to allow achieving high eciency
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