高温sic气敏传感器研究-微电子学集成电路系统设计专业论文.docxVIP

摘要1 摘要 1 高温 S 高温 SiC 气敏传感器研究 PAGE 2 万方数据 万方数据 万方数据 万方数据 摘要 当前，随着尖端科技的不断发展和人们环保意识的逐渐增强，对火箭燃烧产 物、汽车尾气和工业废气等一系列高温有害气体的监测要求越来越高。故作为气 体探测的终端，气敏传感器的存在是必不可少的。碳化硅（SiC）以其优良的物理 化学特性和电学特性成为制造高温、高频、大功率半导体器件的一种最具有优势 的半导体材料。SiC 基气敏传感器主要有三种结构形式：MOS 电容型、SBD 型和 MOSFET 型。文章主要针对后两种结构进行研究。 本文首先分析了 SiC 气敏传感器的响应机理，详细研究了催化金属表面氢吸 附-解吸理论和 SBD 热电子发射理论。考虑理想因子的变化和势垒高度的调制，建 立了 SBD 传感器的物理模型，确定了 SBD 器件中界面层的可取厚度：2-5nm。 探讨了 SBD 传感器的制备技术方案，重点分析了关键绝缘层的重要作用和制 备方法，设计确定了器件的整体结构，提出了一套详细的样品制备流程，并对样 品的响应特性做出合理的预测。 最后，文章对 MOSFET 器件中衬底偏置对气体响应的影响做了简要分析，完 成了 MOSFET 传感器实验流程设计，并绘制了版图，同时指出了制备过程中各工 艺步骤和参数选取的注意事项。 关键字：碳化硅 气敏传感器 关键绝缘层 衬底偏置 3Abst 3 Abstracts PAGE 4高温 PAGE 4 高温 SiC 气敏传感器研究 Abstracts Currently, with the development of advanced science and the increasement of human’s environmental awareness, the demand of monitoring a series of injurious gases with high temperature such as rocket combustion products, automobile exhaust and industrial waste gases is becoming increasingly important. Therefore, gas sensor is essential as a gas detection terminal. SiC is an attractive semiconductor material for high-temperature, high-frequency and high-power semiconductor devices because of its excellent physical, chemical and electronic properties. There are three structures for SiC gas sensors: MOS capacitor, SBD diode and MOSFET device. this paper mainly focuses on the latter two structures. Firstly, the response mechanism of SiC gas sensor is analyzed. Furthermore, the adsorption-desorption principle of hydrogen on the surface of the metal and the SBD thermionic emission theory are studied. With the consideration of variation of the ideal factor and modulation effects of barrier height, a physical model of SBD gas sensor is established and an available thickness of the interface layer is determined as:2-5nm. Secondly, the preparation technology of SBD sensors is discussed. With the detailed analysis of the function and preparation methods of the key insulator, the structure scheme of the device is designed, a detaile