上转换光子非易失性存储器.pdfVIP

  • 6
  • 0
  • 约8.37万字
  • 约 8页
  • 2018-11-09 发布于福建
  • 举报
ARTICLE Received 27 Feb 2014 | Accepted 17 Jul 2014 | Published 21 Aug 2014 DOI: 10.1038/ncomms5720 An upconverted photonic nonvolatile memory 1 1 1 1,2 3 1,2,4 Ye Zhou , Su-Ting Han , Xian Chen , Feng Wang , Yong-Bing Tang V.A.L. Roy Conventional flash memory devices are voltage driven and found to be unsafe for confidential data storage. To ensure the security of the stored data, there is a strong demand for develo

文档评论(0)

1亿VIP精品文档

相关文档