脉冲电沉积制备铟-碲多孔纳米线阵列-中国科技论文在线.PDFVIP

中国科技论文在线 脉冲电沉积制备铟-碲多孔纳米线阵列# 1 2** 汪晓允 ，薛方红 （1. 大连理工大学化工学院，大连 116024； 5 2. 大连理工大学材料科学与工程学院，大连 116024 ） 摘要：本文在室温下, 以多孔阳极氧化铝(PAA)为模板,采用脉冲电沉积方法成功制备出了直 径约为50 nm 的铟-碲(In-Te)多孔纳米线阵列。对制备的样品使用场发射扫描电镜和高分辨 透射电镜进行形貌表征，结果表明该纳米线阵列排列整齐，致密均一，表现出结晶良好的一 10 维结构,且表面呈多孔状，孔径均匀。X 射线衍射表明样品是多相结构, 由In 和Te 元素组成。 使用电化学工作站分析研究了纳米线阵列的电沉积生长机理。通过改变脉冲沉积时间，实现 了对纳米线的孔结构的调控。I-V 曲线表明, In-Te 多孔纳米线阵列有很好的肖特基结性能。 关键词：多孔纳米线阵列；氧化铝模板；脉冲电沉积；铟-碲 中图分类号：O649.4 15 Pulse Electrodeposition Preparation of In-Te Porous Nanowire Arrays 1 2 WANG Xiaoyun , XUE Fanghong (1. College of Chemical Technology, Dalian University of Technology, Dalian 116024; 20 2. College of Materials Science and Engineering, Dalian University of Technology, Dalian 116024) Abstract: In this paper ，indium-tellurium(In-Te) one dimensional porous nanowire arrays with diameter of 50nm have been fabricated by pulse electrodeposition inside the pores of porous anodic alumina (PAA) template at room temperature. The morphology and structure of the porous 25 nanowire arrays have been characterized by FE-SEM and HRTEM, which show that the In-Te porous nanowire arrays are highly ordered and exhibit a well-crystallized one dimensional structure and present a porous structure. X-ray diffraction reveals that the product is polycrystalline and is consist of In and Te. Electrochemical workstation has been used to study the growth process of the nanowires. The I-V curve shows