大功率波长稳定半导体激光器中全息光栅的制备-微电子学与固体电子学专业论文.docx

摘 要 半导体激光器以其体积小、效率高等优良特性在激光通信、激光泵浦等诸多领 域占据着至关重要的地位。但是，随着应用的日益广泛，半导体激光器的激射波长 的稳定性低的问题逐渐出现在研究者们的视野。为了解决上述问题， DFB（分布反 馈）激光器、 DBR （分布布拉格反射）激光器等相继出现。考虑到 DFB激光器的 体积小，波长稳定性好的优点，以及 808nm半导体激光器在激光泵浦中具有非常广 泛的应用，本文主要设计并制作了大功率 808nm DFB半导体激光器。 通过对大功率 808nmDFB ??LD 的相关理论进行的系统分析，并考虑到了光电转 化效率、输出线宽、温漂系数等相关参数，结合耦合模理论以及传输矩阵法，初步 确定了光栅的参数，如：长度 L、衍射级数 m、周期 Λ、占空比 σ、凹槽深度 dg。 随后，利用激光干涉全息曝光和湿法腐蚀工艺制作出适用于大功率 808nmDFB ??LD 中的 InGaP / GaAsP/ InGaP 多膜光栅，利用 SEM （扫描电子显微镜）、 AFM （原子 力显微镜）分析了所制备的全息光栅，在最佳实验环境下，光栅的表面均匀、光栅 形状接近于正弦形。光栅的阶数为 2，长度为 3mm，周期为 242.8nm ，占空比为 0.25 ， 凹槽深度为 40nm 。所制备的大功率 808nmDFB 激光器的输出功率为 2W，条宽为 200μm，腔长为 3mm，阈值电流为 0.52A ，波长漂移系数为 0.075nm / K ，斜率效率 为 0.67W / A 。 关键词：高功率 Bragg 光栅 全息曝光 DFB ABSTRACT Semiconductor lasers have many excellent features, for example, small size, high efficiency and so on. They are widely used in laser communications, laser pumping, and many other fields. However, with the increasingly widespread application of semiconductor lasers, the problem of the quality of low stability of the lasting wavelength begins to emerge in the researchers view. To solve the above problem, DFB lasers, DBR lasers appear. Considering the advantages of small size and wavelength stability of the DFB lasers and the crucial role in laser pumping 808nm semiconductor laser plays, the built-in second-order Bragg grating of the high-power 808nm DFB lasers was mainly designed and prepared in this paper. Through theoretical analysis of high-power 808nmDFB lasers, the parameters such as the photoelectric conversion efficiency, output width, temperature drift coefficient and so on were combined with coupled-mode theory and transfer matrix method. Then the relevant parameters of the grating such as the diffraction order number, period, duty cycle, depth and length were initially identified. Subsequently, the holography exposure and the wet etching processes were utilized to prepare the built-in InGaP/GaAsP/InGaP grating of the high-power 808nm DFB-LD. The SEM and AFM were used to analyze th