双频容性耦合 等离子体刻蚀工艺的物理基础.ppt

One-dimensional model When the chamber radius R is far larger than the distance d between two electrodes, we can use the 1D model to simulate the discharge, i.e., Rd. x=0 x=d LF HF Influence of HF-power frequency on plasma density P = 100mTorr, Vh = 200V, Vl =400V fl = 2MHz, fh = 20, 30, 60MHz, P=50 mTorr, Vh=50 V, Vl=100V, fh =60 MHz, fl=2,5, 10, 13.56 MHz Influence of LF-power frequency on plasma density P = 100mTorr, Vh = 200V, Vl =400V fl = 2MHz, fh = 20, 30, 60MHz, Influence of HF-power frequency on sheath voltage drop 平均鞘层电位降： 与解析模型的比较 fh = 30MHz, P =50mTorr, Vh = 200V, Vl = 400V fl = 2MHz P = 100mTorr, Vh = 200V, Vl = 400V 离子入射到电极上的能量分布 HF power LF power H 2R D Schematic diagram of DF-CCP H= 2.45cm 2R=43.18cm D=6.35cm Two-dimensional model I. Influence of high frequency fH ? averaged electron density: 27MHz 40MHz 60MHz VHF=50V, VLF=100V, fL =2 MHz, p=100 mTorr The electron density increases significantly as increasing values of fL. ? averaged electron temperature: 27MHz 40MHz 60MHz VHF=50V, VLF=100V, fL =2 MHz, p=100 mTorr The electron density increases slightly as increasing values of fL. II. influence of low frequency 12MHz With the increase of low frequency, two sources become from decoupling to coupling, and the electron density increases significantly when two sources coupling. 2MHz 6MHz ? averaged electron density: VHF=50V, VLF=100V, fH =60 MHz, p=100 mTorr ? Averaged electron temperature: 2MHz With the increase of low frequency, the temperature of electrons increases slightly. 6MHz 12MHz VHF=50V, VLF=100V, fH =60 MHz, p=100 mTorr Ez in a LF period: VHF = 50V, VLF = 100V, fLF = 2MHz, fHF = 60MHz, p = 100mTorr Er in a LF period: VHF = 50V, VLF = 100V, fLF = 2MHz, fHF = 60MHz, p = 100mTorr Fluid simulations for CF4 plasmas (1D) Basic model CF4 plasma is an electronegative discharge, i.e., there are no negative ions in the discharge. The plasma is composed of neutrals (atoms and molecules