一种源端由inas材料掺杂的双栅隧穿场效应晶体管的研究微电子学与固体电子学专业论文.docxVIP

AbstractAbstract Abstract Abstract Tunneling field effect transistor(TFET)is proposed as the potential candidate of conventional metal-oxide-semiconductor field effect transistor(MOSFET)．The working mechanism of TFET is band—to-band tunneling mechanism，which is different from the drift-diffusion mechanism in MOSFET．From this point of view， this device has exponential relationship between temperature and the current． Therefore，the sub-threshold current of TFET doesn。t limited by the thermal distribution of carriers and the SS of this device can successfully breaks the limitation of 60mY／dec that MOSFET suffers from．Also，off state current decreases，gate voltage become smaller and the static power consumption of this device reduces as well．However，TFETs suffer from low drive current and ambipoar behavior due to short channel effect(SCE)and the AC behavior of TFET also need to be further investigated．To resolve these boaleneck issues，a new kind of double gate tunneling field effect transistors with InAs source(InAsDGTFET)is studied in detail．The contents mainly includes the direct current(DC)electrical characteristics，transient characteristics and stability of InAsDGTFET． In this paper，the structure of InAsDGTFET device has been established used the software TCAD-ATLAS firstly and based on the structure，DC electrical characteristics are simulated using this software．Also，the results have been compared with the conventional DGTFET．By optimizing the proposed device parameters，drive current Can be achieved as high as 1．09x 1 0．3A／pm，and ION／IoFF ratio is 1 010 that far more than 1 06．Additionally，the sub—threshold swing(SS)of 30mV／decade is gained which breakthrough the limitation of 60mV／decade that MOSFET suffers．Also， variations in source，drain and channel doping concentrations，gate work function and silicon film thickness are investigated．It is found that drive current increases and the threshold voltage(V山)as well SS decreases when the doping concentration in so