JEOL9300电子束光刻系统与其工艺介绍.pptVIP

8/16/06 * JEOL JBX-9300FS Electron Beam Lithography System Georgia Tech Microelectronics Research Center Enabling Nanotechnology 8/16/06 * Nanoimprint Embossing Stamps Researcher: Andrew Ballinger*, Devin Brown** *University of North Texas, **Georgia Tech Microelectronics Research Center 3.5nm gap 20 um EBL Plasma Etch NIL e- e- e- e- e- 80nm line 70nm space 11nm 30nm diameter 7nm 150nm line 80nm line HSQ resist Silicon substrate spin coat exposure develop resist trim silicon etch resist strip stamp imprint resist strip PMMA resist oxide Silicon substrate 10 HOURS!! 10 MINUTES!! / REUSABLE 8/16/06 * Nanopatterned Protein Arrays Graduate Student: Sean Coyer, PI: Andres Garcia Biomedical Engineering, Georgia Tech E-beam Lithography is used to produce patterned arrays presenting adhesive protein islands within non-fouling background to analyze cell adhesion. protein pattern 500 nm 250 nm 5 mm 100 mm cells EBL + metal lift-off PR Au protein resistant group adhesive protein Si 8/16/06 * Nanoscale Resonator Researcher: Michael Kranz*, Mark Allen** *Stanley Associates, **Georgia Tech Electrical Engineering 3.5nm gap 20 um An array of these nanoscale resonators form a high-speed parallel-processing spectrum analyzer for signals in the 100s to 1000s of MHz. A two-step hybrid lithographic approach allowed the large features of the device, including anchors, RF waveguides, and electrodes to be patterned using traditional optical lithography after the micron, submicron, and nanoscale features were patterned using Georgia Techs JEOL EBL system. The device was formed in a thin silicon film sputtered on top of a thin silicon dioxide film that served as a release layer during a standard HF oxide etch. Patterning was accomplished through first exposing a PMMA electron beam resist and subsequently transferring that pattern to a thin chrome layer used as a mask for transferring the pattern to the device silicon. 8/16/06 * Chemically Amplified Resist for Nanoscale Patterns Researcher: