GaN高电子迁移率晶体管高频噪声特性的研究.PDFVIP

第27卷第6期 微摇 波摇 学摇 报 Vol.27 No.6 2011年12月 摇 摇 摇 摇 摇 摇 摇 摇 摇 摇 摇 摇 摇 JOURNAL OF MICROWAVES摇 摇 摇 摇 摇 摇 摇 摇 摇 摇 摇 摇 摇 摇 摇 摇 Dec.2011 文章编号:1005鄄6122(2011)06鄄0084鄄05 GaN 高电子迁移率晶体管高频噪声特性的研究* 1 2 1 1 1 陈勇波摇 周建军摇 徐跃杭 摇 国云川 摇 徐锐敏 (1. 电子科技大学电子工程学院,成都611731; 2. 南京电子器件研究所单片集成电路和模块国家级重点实验室,南京210016) 摘摇 要:摇 基于FUKUI噪声模型,分析了GaN高电子迁移率晶体管(HEMT)器件的高频噪声特性,结果表明,由 于GaN HEMT具有更高的临界电场和更大的电子饱和速度,与第2代半导体器件(GaAs HEMT等)相比具有更优越 的噪声性能。 对近10多年来国内外在GaN HEMT低噪声器件及其低噪声功率放大器单片集成电路(MMIC)方面的 研究进行了综述,并分析了GaN HEMT在低噪声应用领域目前存在的主要问题及其发展趋势。 关键词:摇 氮化镓(GaN),高电子迁移率晶体管(HEMT),高频噪声,低噪声放大器 Research on High Frequency Noise Characters of GaN HEMTs 1 2 1 1 1 CHEN Yong鄄bo ,ZHOU Jian鄄jun ,XU Yue鄄hang ,GUO Yun鄄chuan ,XU Rui鄄min (1. School of Electronic Engineering,University of Electronic Science and Technology of China,Chengdu611731,China; 2. NationalKey Laboratory of Monolithic Integrated Circuit andModules,Nanjing Electronic Devices Institute,Nanjing 210016,China) Abstract:摇 In this paper,the high frequency noise characters of GaN High Electron Mobility Transistors (HEMTs) were studied. It was proved theoretically,based on FUKUI noise model,that the high frequency noise characters of GaN HEMTs were better thantheonesof the second鄄generation semiconductor devicesbecauseof itshigher critical electricalfield andfastersaturatedelectronvelocity. Then,state鄄of鄄the鄄artof GaNHEMTslownoisedevicesandtheirMonolithicMicrowave Integrated Circuit (MMIC)were introduced and summarized. Key words:摇 GaN,high electron mobility transistors (HEMTs),highfrequency noise characters,low noise amplifier (LNA)