晶粒尺寸对氧化钒薄膜电学与光学相变特性的影响-Journalof.PDF

58 / 2011 4 Effects of Grain Size on Resistance and T ransmitt ance T ransit ion of Vanadium Oxide T hin Film 1 1 2 1 3 2 , , , , , ( 1 , 3000 2; 2 , 100083; 3 , 100083) 1 1 2 1 LIANG Jiran , HU M ing , KAN Qiang , CHEN Tao , 3 2 LIANG Xiuqin , CHEN H ongda ( 1 School of Electronic and Information Engineering, Tianjin U niversity, Tianjin 3000 2, China; 2 State Key Lab on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; 3 Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China) : , , : 300 360 , 40% , , 50nm 100nm; 360 , , ; , ; 30 , 8 , : ; ; : O648; O484; TB43 : A : 2011) Abstract: Vanadium oxide thin films w ere deposited by reactive direct current facing targets magne tron sputtering, and then annealed in oxygen ambience under different temperature to fabricate phase transition vanadium dioxide thin films w ith different grain size. The transformation of resistance and transmittance of v