IGBT Chip技术及对应SEMIKRON产品.docxVIP

IGBT Chip技术及对应SEMIKRON产品 芯片技术分类： ------------------------------------------------------------------------------------------------------------------------------- NPT: no punch through technology 非穿通技术 SPT: soft puch through technology 软穿通技术 Trench 3 : trench technology，第三代挖槽技术 Trench 4: trench technology , 第四代挖槽技术 特性： --------------------------------------------------------------------------------------------------------------------------------- NPT: 通态压降低，工作频率提高； SPT: 通态压降近一步降低，工作频率提高； Trench 3：较低的通态压降，损耗较大，体积减少，效率提高，成本减少，制造难度加大。 Trench 4：较低的损耗，效率更高，体积更小，制造难度更大。 SEMIKRON的IGBT产品 --------------------------------------------------------------------------------------------------------------------------------- 举例： SKM 400 GB 12 3/4/5/6/8/T4/E4/V D SKM: SEMITRANS IGBT 模块 400: 代表电流为400A GB: 代表拓扑电路为半桥结构 12： 代表电压为1200V 3 : 代表IGBT芯片结构 ------------------------------------------------------------------------------------------------------------- 3: standard IGBT(NPT) , 4: 低耗IGBT(NPT) 5: Ultrafast IGBT(NPT), 6: Trench 3IGBT 7: Hyperfast IGBT（NPT），8: SPT IGBT（ABB） T4/E4: Trench 4 IGBT(Infineon)， V: Trench 4 IGBT（FUJI） --------------------------------------------------------------------------------------------------------------- D: 代表反并联的FWD采用了CAL技术 NPT IGBT( IGBT 2) –Old product, not recommended for new designs NPT IGBT Ultrafast – For application with fsw20KHz, higher Vce-sat, low Eon+Eoff. IGBT 3(Trench 3) –For application with fsw5KHz, lower Vce-sat, high Eon+Eoff IGBT 4(Trench 4) –for application with 5KHzfsw20KHz T4 – lower loss, more efficient, but not recommended for paralleling E4 – Higher loss, but recommended for paralleling IGBT V(FUJI) –Very similar with IGBT T4, but the gate charge(Qg) is higher. Iout_av = Qg * fsw Power Loss = Conduction Loss( Vce-sat) +Swithing Loss( Eon+Eoff) Parameters: Vces – voltage class Icnom – nominal current Vce_sat – saturation voltage drop Qg – gate charge Rg_on, Rg_off – min. recommended gate resistors Eon, Eof