4-双极晶体管.pptVIP

§3-6 Frequency Characteristics E-B SCR charging time, Cje/gm: Minimized by: tailoring doping profiles at E-B junction NB B-C SCR charging time, Cjc/gm: Minimized by: NC tailoring doping profiles at B-C junction. tightening layout of transistor: §3-7 Non-ideal effects in BJT Early effect: impact of VBC on WB Reverse early effect: impact of VBE on WB IB unchanged smaller IC than ideal , IB unchanged Early effect: impact of VBC on WB Note: VBC more negative To capture first-order impact, linearize WB (VBC): VA is Early voltage: Impact on IC: since typically Notice: .Then Also, since IB unchanged: Manifestation of Early effect in output characteristics: Main consequence of Early effect: finite slope in output characteristics in FAR: out put conductance. With go given by: Base-width modulation VBE and VBC affect xBC , respectively Kirk effect fT: high-frequency figure of merit for transistors Short-circuit means from the small-signal point of view. BJT is biased in FAR. Focus on small-signal current gain: Definition of fT: frequency at which |h21|=1. For low frequency, h21 , for high frequency h21 rolls off due to capacitors. Small-signal equivalent circuit model: Then: Magnitude of h21: Bode plot of |h21|: Three regimes in |h21|: intermediate frequency, low frequency, high frequency, Angular frequencies that separate three regimes: Angular frequency at which |h21|=1: In terms of frequency: Note: Physical meaning of fT fT has units of time. Define delay time: Four delay components in . Consider response of BJT to a step-input base current: At As How much time does it takes for ic to reach its final value? Charge must be delivered to four regions in BJT: Quasi-neutral emitter Quasi-neutral base Emitter-base depletion region Base-collector depletion region Charge delivered at constant rate to base. Time that it takes for all charge to be delivered: How much time does it take for ic to build up to IC + ib ? : delay time before ic