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- 2019-03-29 发布于湖北
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Chapter 6.5: The MOS Field Effect Transistor;The Development of Integrated Circuits;6.5.9 MOSFET Scaling;;Hot electron effects;Hot electron effects;Hot electron effects;Hot electron effects;Hot electron effects;6.5.10 Drain-induced barrier lowering;6.5.10 Drain-induced barrier lowering;6.5.10 Drain-induced barrier lowering;6.5.11 Short channel and narrow width effect;6.5.11 Short channel and narrow width effect;6.5.11 Short channel and narrow width effect;6.5.12 Gate –induced Drain leakage;6.5.12 Gate –induced Drain leakage
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