低温生长CuInxGaxSe2薄膜太阳电池主要复合路径分析1.PDF

低温生长CuIn Ga Se 薄膜太阳电池主要复合路径分析1 1-x x 2 刘玮*，姜伟龙，逄金波，何青，孙云 （南开大学信息学院光电子所，天津市光电子薄膜器件与技术重点实验室，300071） o 摘要：本文采用低温三步法制备半导体黄铜矿CuIn Ga Se （CIGS）薄膜。即第一步衬底温度为350 C，第二 1-x x 2 和三步均为 450oC。以CIGS薄膜为吸收层制备结构为SLG/Mo/CIGS/CdS/ZnO/ZnO:Al/Ni-Al的太阳电池。其中P 型CIGS与N型CdS形成异质结界面。通过分析太阳电池的变温电压－电流（JVT）特性曲线，求得激活能。同时 结合品质因子与温度曲线的响应关系，并采用异质结隧穿增强的复合模型，拟合出特征隧穿能和缺陷分布特 征能，最终确定了影响低温制备的CIGS器件电特性的主要复合机制，对于加深该器件的电输运理解起到积极 作用。 关键词：太阳电池；CIGS薄膜吸收层；复合路径 The recombination paths of CIGS thin film solar cells prepared by low-temperature process Wei Liu, Wei-long Jiang, Jin-bo Pang, Qing He, Yun Sun (Tianjin key Laboratory for Photoelectronic Thin Film Devices and Technology, Institute of Photoelectronic Thin film Device and Technology, Nankai University, Tianjin,China 300071) Abstract: the chalcopyrite CIGS semiconductor thin film deposited by low-temperature three-stage co-evaporation process. In the o o first stage, the substrate temperature is 350 C, subsequently the substrate temperature is kept on 450 C in second and third stages. The configuration of CIGS thin film-based solar cell is as SLG/Mo/CIGS/CdS/ZnO/ZnO:Al/Ni-Al. grid, and the heterojunction is formed between P type CIGS and N type CdS. In our work, the temperature-dependent current-voltage (JVT) measurements on CIGS solar cells are investigated. The active energy is extracted from JVT measurement data. Simultaneously, the ideality factors in different temperature are fitted by tunneling enhanced recombination models, which can deduce the characteristic tunneling energy and ch