（毕业论文）CMOS运算放大器的设计与仿真.docVIP

ABSTRACT 摘 要 PAGE 64 PAGE 63 中文摘要 通过CMOS运算放大器设计与仿真这一课题的研究，能更深刻的理解其构造，工作原理,以及各电性指标的意义和测试方法。进一步的掌握在不同放大电路中所选用的运算放大器的特性。选择放大器在今天是一个相当复杂的事情。其部分原因在于，系统设计要求的多样性，以及电路配置的多重性，不同的放大器产品根据应用领域的不同需要在性能上进行折衷。每一种应用都是一个不同技术指标的组合体，所以其使用的放大器数量也将不断增加才能满足其要求。与原来的运算放大器相比，今天的产品扩展了带宽、降低了电源电压、减小了功耗电流、节省了PCB面积而且降低了成本。随着对信噪比(SNR)要求的增加，以及实际信号处理在家用电器和工业设备中得到越来越广泛的应用，这种趋势还将继续发展。 关键词：电性指标 测试方法 放大特性 ABSTRACT CMOS operational amplifiers through the design and simulation study of this topic to a deeper understanding of its structure, working principle, as well as the significance of electrical indicators and testing methods. Further in the hands of the different selection of amplifier in the op-amp characteristics. Choice of amplifiers in today is a very complex issue. Part of the reason lies in the fact that the diversity of system design requirements, as well as multiple circuit configurations, different amplifier products in accordance with the different needs of applications on a compromise in performance. Each application is a different combination of technical indicators, so the use of the amplifier will continue to increase the number to meet its requirements. With the original op-amp as compared to todays product extends the bandwidth and reduce the supply voltage reduces the power consumption current, saving PCB space and reduces costs. As the signal to noise ratio (SNR) increase in demand, as well as the actual signal processing in home appliances and industrial equipment have been growing a wide range of applications, this trend will continue to develop. Keyword：electrical indicators testing methods amplifier op-amp characteristics. 目 录 TOC \o 1-3 \h \z \u HYPERLINK \l _Toc231812655 第1章 引言 PAGEREF _Toc231812655 \h 1 HYPERLINK \l _Toc231812656 第2章 MOSFET（金属-氧化物-半导体场效应管） PAGEREF _Toc231812656 \h 2 HYPERLINK \l _Toc231812657 2.1 N沟道增强型MOSFET PAGEREF _Toc231812657 \h 2 HYPERLINK \l _Toc231812658 2.1.1 结构特征： PAGEREF _Toc231812658 \h 3 HYPERLINK \l _Toc231812659 2.1.