镧与锰掺杂铁酸铋铁电薄膜的制备与性能研究-微电子学与固体电子学专业论文.docxVIP

II II Abstract Lead-free BiFeO3 (BFO) ferroelectric thin film, with a rhombohedrally distorted perovskite structure with space group R3c (a = 5.36 ? and ??= 59.348°), is the only one that exhibits both ferroelectricity and G-type antiferromagnetism at room temperature, and possesses a giant remanent polarization and high Curie temperature (TC = 1103 K) and high Neel temperature (TN = 643 K), which make itself a candidate material for high-density nonvolatile ferroelectric random access memory and other potentially interesting applications, such as actuators, sensors, and tunabl