4 半导体存储器精编版.pptVIP

* * n沟Flash和p沟Flash EEPROM的性能及可靠性的比较 Cell Type Program speed Erase speed Window closure n-channel Slow Fast Exist P-channel Fast Slow None * FG cells should ensure a data retention time of 10 yrs at room temperature: low leakage from FG Accelerated electrical stresses are customarily performed in order to verify that Write/Erase electrical operations at high fields do not endanger the long time retention properties Appearance of a single failing bit is a big concern: the memory chip fails Data retention properties of irradiated FG cells: an open question * VTH statistical distribution 0.15mm2