MOSFET-热阻测试.docVIP

Tony.he 158-2079-5808 Measurement of MOS FET devices by booster device MOS FET devices can be measured using three different electrical setups. Reverse diode measurement In the first setup we use the reverse diode of the device for heating and measurement also. The power step is applied using the so called current step method by switching from a higher Iforce+Isense current level to Isense measurement current and using the forward voltage as temperature sensitive parameter. to T3Ster channel to T3Ster channel Isense Iforce Both Iforce and Isense can be programmed in the booster which is a unipolar device of positive polarity. The device voltage is typically below 1V. MOS diode measurement In the second setup we connect the Gate to the Drain pin and measure this three terminal device as a so called MOS diode. We apply a similar current step as described above and measure the forward voltage of the MOS diode. to T3Ster channel to T3Ster channel Isense Iforce The device voltage is typically 2 .. 5V corresponding to gate threshold voltage. Measurement with heating on channel resistance and sensing on reverse diode In this third setup the electrical connection is a bit more complex. to T3Ster channel to T3Ster channel Isense Iforce UG In the heating phase the UG voltage is at high level ensuring continuous heating current through the channel resistance RDSon. The positive heating current comes from the booster and a negative sense current is generated by an other equipment, e.g. T3Ster. At the start of the cooling Iforce is switched off and UG also goes to zero thus closing the transistor. The continuously flowing negative Isense causes the reverse diode to open. The device voltage is typically low on the channel resistance and -0.5V on the reverse diode at cooling. A practical problem is that the booster output is of devices of large surface in order to switch hundred amperes. This can cause leakage at negative voltages, resulting in loss of the measurement c