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高分辨X 射线衍射技术在GaN LED 生产中的应用
万方数据
Abstract
Abstract
Following the first generation Ge, Si semiconductor materials and the second
generation of GaAs, InP compound semiconductor materials, GaN based materials are
called the third generation semiconductor materials. Their band gap are wide, and they
have the characteristics of high electron saturation drift velocity, low dielectric constant,
good thermal conductivity, good chemical and thermal stability, are quite suitable for
the fabrication of high temperature, high frequency and high power electronic devices.
With the continuous improvement of technology, GaN based blue and green LED has to
scale produced. However, the technology is not fully mature, there are still many
problems to be solved, the pursuit of high power and high photoelectric conversion
efficiency are still keys in the growth of LED.
In practical applications, the epitaxial structure optimization is an important means
to enhance the efficiency of the device, and is an important basis for the test of crystal
quality, structural parameters and analysis of structural and process optimization to the
wafer. High-resolution X-ray diffraction techniques to quickly and accurately informed
the crystal quality of GaN epitaxial layer structure without damage, and is the ideal way
to achieve the above functions in the first time for the large-scale production of the
required data.
a) T
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