GaAs基VCSEL结构特性模拟和表征.pdfVIP

ABSTRACT Itcombines aJldsimulationinthis a11d experiInent p印er．GaSbsinglelayerGaSb／InAs are me superlatticeson substrateViamolecular grown ofInAs／GaSbis 1O，20，aJld curveismeasured period respectiVely eVeUrocbng by dimaction．Peak half t11icknessandstrain double-crys谢X-rayposition，peakwidm，layer wereobtained the cuⅣesViaX’Pen with byanalyzingrocking Epitaxy．Along ofthemolecular wholeVCSELstmcturebaSedonGaAsis be锄epi锨y(MBE)，the groWn is is to VCSEL of byMBE，eVerypeakapp踟．ent，whichsigni6cant guiding experimem molecularbearll epitaxy． m01ecular GaSbis By be锄epitaxy(MBE)apparatus，singlelayer firstlygrown，Using dim．actioncurvesofthe curves measured，the double-crystalX-ray roc妯ng salllple rocking arecombinedso行waresimulationwith test weobtainedhalfwidthof result，then peak filmGaSbis26 isa the in monolayer arcsec，Which Ve巧sha印peak，itproVesgrowthgood indicates MBE qual时and monolayergro吼hby equipmentalreadymastered；Then，10，20， 50 ofthe GaSb／IIlAs is the curVesare respectiVelyperiodic superlanice gro、Ⅳn，androcking combinedsoRwaresimulationwithtest actu