WET工艺介绍相关知识.pptVIP

unique id: 086465 Documentum\SMIC-IP(Aug2001)(Scn).ppt Mechanism: Si3N4 + 6H2O -------- 3SiO2 + 4NH3 (H3PO4 as catalyst) ER A/min Si Conc. (ppm) Particle (#/ml,@0.2um) SiN SiO2 Particle Nitride Remove When the Silicon content is very high, oxide etch rate decreases. Silicon may even re-deposit on wafer and trap some H3PO4. If this Phos is implanted/driven into the wafer, it will give extra “n” type which may lead to leaky Field Oxide and poor GOI. In order to stabilize the etch loss of oxide, for the 2 H3PO4 tank process time, Tank 1 time is set to remove all the N