二极管和晶体管上课讲义.pptVIP

Figure 3.18 N MOSFET的特性曲线 600 500 400 300 200 100 0 VGS = +5V VGS = +4V VGS = +3V VGS = +2V VGS = +1V 0 1 2 3 4 5 6 Drain-Source Voltage, VDS (volts) Drain Current, IDS (ma) Saturation Region Linear Region VDD = -3.0 V Open gate (no charge) Lamp (no conduction) Source Gate Drain p+ p+ n-type silicon substrate VGG = - 0.7 V S1 Figure 3.19 P MOSFET的偏置电路 IDS VDD = - 3.0 V Lamp e- e- e- Gate Source Drain - - - - - - - - - - - - - - - - - - - - - - - - n-type silicon substrate Electrons p+ p+ Negative ch