CuInS2和CuIn1xGax垫S2光电材料的制备及其能带计算.docx

CuInS2和CuIn1xGax垫S2光电材料的制备及其能带计算.docx

优秀毕业论文 精品参考文献资料 山东建筑大学硕士学位论文Preparation 山东建筑大学硕士学位论文 Preparation and Energy band-gap calculation of CulnS2 and CUlnl.xGaxS2 photoelectric materials Yu Liuyang(Material Science) Directed by Liu Kegao ABSTRACT With the emergency of energy crisis,people were forced to seek new energy source.Solar energy,which is inexhaustible and pollution free,has amused people’S attention.CulnS2 is semiconducting material with direct band gap about 1.50eV.It matches well with solar spectrum,has large absorption coefficient and high conversion efficiency,and it has 900d stability.Doping dement Ga in CulnS2 make

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