电子器件金半接触.pptVIP

acceptor 受主 donor 施主 recombination 复合 majority 多子 minority 少子 transition region 过渡区 depletion region 耗尽区 contact barrier 接触势垒 p-n junction pn结 heterojunction/异质结 EHP 电子空穴对 homojunction/同质结 半导体器件工作的基本方程 5.7.1 Schottky Barriers /wiki/Walter_H._Schottky (The image PE is usually combined with terms relating to an applied electric field F and to the height h (in the absence of any field) of the barrier. This leads to the following expression for the dependence of the barrier energy on distance x, measured from the electrical surface of the metal, into the vacuum or into the semiconductor: Here, e is the elementary positive charge, ε0 is the electric constant and εr is the relative permittivity of the second medium (=1 for vacuum). In the case of a metal-semiconductor junction, this is called a Schottky barrier; in the case of the metal-vacuum interface, this is sometimes called a Schottky-Nordheim barrier. In many contexts, h has to be taken equal to the local work function φ. This Schottky-Nordheim barrier (SN barrier) has played in important role in the theories of thermionic emission and of field electron emission. Applying the field causes lowering of the barrier, and thus enhances the emission current in thermionic emission. This is called the Schottky effect, and the resulting emission regime is called Schottky emission. Four sets of combination: (1)metal-n type semiconductor, q?m q?s (2)metal-n type semiconductor, q?m q?s (3)metal-p type semiconductor, q?m q?s (4)metal-p type semiconductor, q?m q?s Two kinds of MS contacts will occur: rectifying and ohmic The rectifying contact is similar to the p-n junction in function.(diode) The ohmic contact is usually used to connect semiconductors to electrodes or wires.(resistor) the electrostatic potential of the semiconductor must be raised V0 the electron energy must be lowered. –qV0 the depletion region is formed near the junction. Contact potential barrier